Conductive atomic force microscopy study of InAs growth kinetics on vicinal GaAs (110)

Journal Article · Mon Sep 21 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3232234· OSTI ID:21294328

Tejedor, Paloma; Diez-Merino, Laura ^[1]; Beinik, Igor; Teichert, Christian ^[2]

---

1. Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Ines de la Cruz 3, 28049 Madrid (Spain)
2. Institut fuer Physik, Montanuniversitaet Leoben, Franz Josef St., 18A-8700 Leoben (Austria)

Conductive atomic force microscopy has been used to investigate the effect of atomic hydrogen and step orientation on the growth behavior of InAs on GaAs (110) misoriented substrates. Samples grown by conventional molecular beam epitaxy exhibit higher conductivity on [110]-multiatomic step edges, where preferential nucleation of InAs nanowires takes place by step decoration. On H-terminated substrates with triangular terraces bounded by [115]-type steps, three-dimensional InAs clusters grow selectively at the terrace apices as a result of a kinetically driven enhancement in upward mass transport via AsH{sub x} intermediate species and a reduction in the surface free energy.

• OSTI ID: 21294328
• Journal Information: Applied Physics Letters, Vol. 95, Issue 12; Other Information: DOI: 10.1063/1.3232234; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ATOMIC FORCE MICROSCOPY
CRYSTAL GROWTH
ELECTRIC CONDUCTIVITY
ELECTRON MOBILITY
GALLIUM ARSENIDES
GRAIN ORIENTATION
HYDROGEN
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
NUCLEATION
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACE ENERGY