Formation and incorporation of SiF{sub 4} molecules in F-implanted preamorphized Si
- MATIS INFM-CNR and Department of Physics, Padova University, via Marzolo 8, 35131 Padova (Italy)
- Department of Physics and CNISM, Bologna University, viale C. Berti Pichat 6/2, 40127 Bologna (Italy)
- MATIS INFM-CNR and Department of Physics and Astronomy, Catania University, via S. Sofia 64, 95123 Catania (Italy)
- LAAS-CNRS, Toulouse University, 7 av. du Colonel Roche, 31077 Toulouse (France)
The local structure of fluorine incorporated in crystalline silicon following solid phase epitaxial regrowth was investigated by means of x-ray absorption spectroscopy at the F K-edge. We clearly demonstrate that most F is found in SiF{sub 4} molecules in the crystalline matrix. A kinetic pathway, which explains our observation and which is also able to rationalize previous results in a common and coherent framework, is proposed.
- OSTI ID:
- 21294315
- Journal Information:
- Applied Physics Letters, Vol. 95, Issue 10; Other Information: DOI: 10.1063/1.3216806; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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