Interconnected Si nanocrystals forming thin films with controlled bandgap values

Journal Article · Mon Aug 24 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3216072· OSTI ID:21294288

Nychyporuk, T; Zakharko, Yu; Lysenko, V; Lemiti, M ^[1]

---

1. Lyon Institut of Nanotechnologies (INL), CNRS UMR-5270, University of Lyon, INSA de Lyon, 7 avenue Jean Capelle, Bat. Blaise Pascal, 69621 Villeurbanne Cedex (France)

Interconnected Si nanocrystals forming homogeneous thin films with controlled bandgap values from 1.2 to 2.9 eV were formed by pulsed plasma enhanced chemical vapor deposition technique under dusty plasma conditions. The chosen values of plasma duration time correspond to specific phases of the dust nanoparticle growth. Structural and optical properties of the deposited nanostructured films are described in details. These nanocrystalline Si thin films seem to be promising candidates for all-Si tandem solar cell applications.

• OSTI ID: 21294288
• Journal Information: Applied Physics Letters, Vol. 95, Issue 8; Other Information: DOI: 10.1063/1.3216072; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
CRYSTALS
DUSTS
ENERGY GAP
NANOSTRUCTURES
OPTICAL PROPERTIES
PARTICLES
PLASMA
SEMICONDUCTOR MATERIALS
SILICON SOLAR CELLS
THIN FILMS