Polarization and temperature dependence of photoluminescence of m-plane GaN grown on {gamma}-LiAlO{sub 2} (100) substrate
- Department of Physics, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093 (China)
- Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China)
We investigated the polarization and temperature dependence of photoluminescence (PL) of m-plane GaN grown on {gamma}-LiAlO{sub 2} (100) substrate. The calculated electronic band structure with kp Hamiltonian points out the energy splitting as well as polarization selection originate from the m-plane GaN epilayer under anisotropic strain. The polarization-angle dependence PL spectra are found to be selected from in-plane x- and z-polarized emission, corresponding to T{sub 1} and T{sub 2} transition. And the intensity distribution of the fitting peaks satisfies the Malus' law. An S-shape energy evolution of near band edge peak on temperatures is observed, which originates from the transition between the localized holes and electrons in triangular potentials induced by basal stacking faults.
- OSTI ID:
- 21294233
- Journal Information:
- Applied Physics Letters, Vol. 95, Issue 6; Other Information: DOI: 10.1063/1.3204453; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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