Quasi-single-crystal (001) SrTiO{sub 3} templates on Si

Journal Article · Mon Aug 10 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3202398· OSTI ID:21294232

Park, J W; Baek, S H; Bark, C W; Eom, C B ^[1]; Biegalski, M D ^[2]

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1. Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
2. Oak Ridge National Laboratory, Center for Nanophase Materials Sciences, Oak Ridge, Tennessee 37830 (United States)

The integration of multifunctional oxides on semiconductor devices requires the formation of single-crystal-like oxide templates directly on silicon. We report the fabrication of quasi-single-crystal (001) SrTiO{sub 3} templates on (001) Si by annealing 100 nm thick molecular beam epitaxy-grown epitaxial SrTiO{sub 3} films at 900 deg. C. The full width at half maximum of the (002) rocking curve is 0.006 deg., which is much narrower than SrTiO{sub 3} bulk single crystals. An atomically smooth TiO{sub 2}-terminated surface is obtained by buffered-HF etching, which allows us to create functional oxide heterointerfaces on Si. Epitaxial SrRuO{sub 3} thin films grown on the quasi-single-crystal SrTiO{sub 3} template exhibit a superior crystalline quality and surface morphology.

• OSTI ID: 21294232
• Journal Information: Applied Physics Letters, Vol. 95, Issue 6; Other Information: DOI: 10.1063/1.3202398; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL GROWTH
ETCHING
LAYERS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
MORPHOLOGY
NEUTRON DIFFRACTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SILICON
STRONTIUM TITANATES
THIN FILMS
TITANIUM OXIDES