Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures
- Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan)
- National Institute of Physics, University of the Philippines, Diliman, Quezon City 1101 (Philippines)
- Department of Physical Sciences, University of the Philippines, Baguio City 2600 (Philippines)
We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.
- OSTI ID:
- 21294145
- Journal Information:
- Applied Physics Letters, Vol. 94, Issue 23; Other Information: DOI: 10.1063/1.3148670; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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