Hydrodynamic modeling of optically excited terahertz plasma oscillations in nanometric field effect transistors

Journal Article · Mon May 11 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3137189· OSTI ID:21294077

Marinchio, H; Sabatini, G; Palermo, C; Pousset, J; Torres, J; Chusseau, L; Varani, L ^[1]; Shiktorov, P; Starikov, E; Gruzinskis, V ^[2]

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1. Institut d'Electronique du Sud, UMR 5214 CNRS, Universite Montpellier 2, 34095 Montpellier (France)
2. Semiconductor Physics Institute, A. Gostauto 11, 2600 Vilnius (Lithuania)

We present a hydrodynamic model to simulate the excitation by optical beating of plasma waves in nanometric field effect transistors. The biasing conditions are whatever possible from Ohmic to saturation conditions. The model provides a direct calculation of the time-dependent voltage response of the transistors, which can be separated into an average and a harmonic component. These quantities are interpreted by generalizing the concepts of plasma transit time and wave increment to the case of nonuniform channels. The possibilities to tune and to optimize the plasma resonance at room temperature by varying the drain voltage are demonstrated.

• OSTI ID: 21294077
• Journal Information: Applied Physics Letters, Vol. 94, Issue 19; Other Information: DOI: 10.1063/1.3137189; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ELECTRIC POTENTIAL
ELECTRON MOBILITY
FIELD EFFECT TRANSISTORS
HYDRODYNAMIC MODEL
NANOSTRUCTURES
PLASMA
PLASMA SIMULATION
PLASMA WAVES
TEMPERATURE RANGE 0273-0400 K
TIME DEPENDENCE