skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Change in Ion Beam Induced Current from Si Metal-Oxide-Semiconductor Capacitors after Gamma-Ray Irradiation

Abstract

To investigate the effects of gamma-ray irradiation on transient current induced in MOS capacitors by heavy ion incidence, Si MOS capacitors were irradiated with gamma-rays up to 60.9 kGy(SiO2). The change in Transient Ion Beam Induced Current (TIBIC) signals due to gamma-ray irradiation was investigated using 15 MeV-oxygen ion microbeams. After gamma-ray irradiation, the peak current of the TIBIC signal vs. bias voltage curve shifted toward negative voltages. This shift can be interpreted in terms of the charge trapped in the oxide. In this dose range, no significant effects of the interface traps induced by gamma-ray irradiation on the TIBIC signals were observed.

Authors:
; ;  [1];  [2]; ;  [3]
  1. Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)
  2. College of Science and Technology, Nihon University, Funabashi (Japan)
  3. Sandia National Laboratories, PO Box 5800, MS 1056, Albuquerque, NM 87185 (United States)
Publication Date:
OSTI Identifier:
21289498
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1099; Journal Issue: 1; Conference: CAARI 2008: 12. international conference on application of accelerators in research and industry, Fort Worth, TX (United States), 10-15 Aug 2008; Other Information: DOI: 10.1063/1.3119985; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITORS; ELECTRIC CONDUCTIVITY; GAMMA RADIATION; INTERFACES; IRRADIATION; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON; TRANSIENTS

Citation Formats

Ohshima, T, Onoda, S, Hirao, T, Takahashi, Y, Vizkelethy, G, and Doyle, B L. Change in Ion Beam Induced Current from Si Metal-Oxide-Semiconductor Capacitors after Gamma-Ray Irradiation. United States: N. p., 2009. Web. doi:10.1063/1.3119985.
Ohshima, T, Onoda, S, Hirao, T, Takahashi, Y, Vizkelethy, G, & Doyle, B L. Change in Ion Beam Induced Current from Si Metal-Oxide-Semiconductor Capacitors after Gamma-Ray Irradiation. United States. https://doi.org/10.1063/1.3119985
Ohshima, T, Onoda, S, Hirao, T, Takahashi, Y, Vizkelethy, G, and Doyle, B L. 2009. "Change in Ion Beam Induced Current from Si Metal-Oxide-Semiconductor Capacitors after Gamma-Ray Irradiation". United States. https://doi.org/10.1063/1.3119985.
@article{osti_21289498,
title = {Change in Ion Beam Induced Current from Si Metal-Oxide-Semiconductor Capacitors after Gamma-Ray Irradiation},
author = {Ohshima, T and Onoda, S and Hirao, T and Takahashi, Y and Vizkelethy, G and Doyle, B L},
abstractNote = {To investigate the effects of gamma-ray irradiation on transient current induced in MOS capacitors by heavy ion incidence, Si MOS capacitors were irradiated with gamma-rays up to 60.9 kGy(SiO2). The change in Transient Ion Beam Induced Current (TIBIC) signals due to gamma-ray irradiation was investigated using 15 MeV-oxygen ion microbeams. After gamma-ray irradiation, the peak current of the TIBIC signal vs. bias voltage curve shifted toward negative voltages. This shift can be interpreted in terms of the charge trapped in the oxide. In this dose range, no significant effects of the interface traps induced by gamma-ray irradiation on the TIBIC signals were observed.},
doi = {10.1063/1.3119985},
url = {https://www.osti.gov/biblio/21289498}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1099,
place = {United States},
year = {Tue Mar 10 00:00:00 EDT 2009},
month = {Tue Mar 10 00:00:00 EDT 2009}
}