Electric carrier concentration in graphite: Dependence of electrical resistivity and magnetoresistance on defect concentration

Journal Article · Sun Nov 15 00:00:00 EST 2009 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.80.195402· OSTI ID:21287110

Arndt, A; Spoddig, D; Esquinazi, P; Barzola-Quiquia, J; Dusari, S; Butz, T ^[1]

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1. Institut fuer Experimentelle Physik II, Universitaet Leipzig, Linnestrasse 5, D-04103 Leipzig (Germany)

We investigate the dependence of the electrical resistivity and magnetoresistance of single crystalline micrometer-sized graphite samples of a few tens of nanometers thick on the defect concentration produced by irradiation at low fluences. We show that the carrier density of graphite n is extremely sensitive to the induced defects for concentrations as low as {approx}0.1 ppm and follows n{approx}1/R{sub V}{sup 2} with R{sub V} the distance between defects in the graphene plane. These and Shubnikov-de Haas oscillations results indicate that at least a relevant part of the carrier densities measured in graphite is not intrinsic.

• OSTI ID: 21287110
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 80, Issue 19; Other Information: DOI: 10.1103/PhysRevB.80.195402; (c) 2009 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARBON
CARRIER DENSITY
CHARGE CARRIERS
CRYSTAL DEFECTS
ELECTRIC CONDUCTIVITY
GRAPHITE
IRRADIATION
MAGNETORESISTANCE
MONOCRYSTALS
NANOSTRUCTURES
OSCILLATIONS
SHUBNIKOV-DE HAAS EFFECT