Spin transistor based on cadmium fluoride nanostructures
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
- St. Petersburg State University of Information Technologies, Mechanics, and Optics (Russian Federation)
A study of CdB{sub x}F{sub 2-x}/p-CdF{sub 2}/CdB{sub x}F{sub 2-x} planar sandwich structures fabricated on n-CdF{sub 2} crystal surface was carried out in order to obtain the spin-transistor effect at room temperature. Features related to the band gap of CdF{sub 2} (7.8 eV) along with those related to the spectrum for two-dimensional (2D) hole subbands in p-CdF{sub 2} quantum well (QW) were observed in the current-voltage characteristics for ultrashallow p{sup +}-n junctions. The results obtained demonstrate the important role for 2D hole subbands in the mechanism of the 'proximity effect' that appears due to Andreev's reflection in sandwich structures consisting of a narrow QW confined between superconducting barriers. Resonance behavior for the longitudinal voltage in a weak magnetic field normal to the plane of the p-CdF{sub 2} QW gives evidence for high degree of spin polarization for 2D holes. Analysis of the dependences for the 2D-hole-gas conductance on the magnitude and direction of the magnetic field normal to the plane of the p-CdF{sub 2} QW reveals anti-crossings for Zeeman sublevels in the singlet ground state and triplet excited state of boron dipole centers, responsible for the spin polarization of 2D holes in edge channels in the p-CdF{sub 2} QW. The high degree of spin polarization for 2D holes in edge channels in the p-CdF{sub 2} QW identifies the mechanism underlying spin-transistor I-V characteristics observed upon the variation of the gate voltage, which controls the magnitude of Bychkov-Rashba's spin-orbit coupling.
- OSTI ID:
- 21260439
- Journal Information:
- Semiconductors, Vol. 43, Issue 1; Other Information: DOI: 10.1134/S1063782609010163; Copyright (c) 2009 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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