The effect of silicon crystallographic orientation on the formation of silicon nanoclusters during anodic electrochemical etching
- Mechnikov National University of Odessa (Ukraine)
Possible ways for increasing the photoluminescence quantum yield of porous silicon layers have been investigated. The effect of the anodization parameters on the photoluminescence properties for porous silicon layers formed on silicon substrates with different crystallographic orientations was studied. The average diameters for silicon nanoclusters are calculated from the photoluminescence spectra of porous silicon. The influence of the substrate crystallographic orientation on the photoluminescence quantum yield of porous silicon is revealed. A model explaining the effect of the substrate orientation on the photoluminescence properties for the porous silicon layers formed by anode electrochemical etching is proposed.
- OSTI ID:
- 21260438
- Journal Information:
- Semiconductors, Vol. 43, Issue 1; Other Information: DOI: 10.1134/S1063782609010175; Copyright (c) 2009 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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