Transverse spatial transport in field-effect transistors based on heterostructures with selective doping and the limits of applicability of quasi-hydrodynamic models
- Research Institute MEIIT MIEM (Russian Federation)
- Federal State Unitary Corporation Istok (Russian Federation)
For field-effect transistors based on heterostructures with selective doping, the results of calculations for the output characteristics of devices on the basis of the hydrodynamic model are compared with those based on the quasi-hydrodynamic (temperature-related) model. It is shown that the transverse spatial transport and heavy dependences of relaxation times on energy lead to the situation where the results of calculations based on the above models differ appreciably from one another at the gate lengths that much exceed the length of electron relaxation by momentum.
- OSTI ID:
- 21260435
- Journal Information:
- Semiconductors, Vol. 43, Issue 1; Other Information: DOI: 10.1134/S1063782609010217; Copyright (c) 2009 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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