Analysis of forward current-voltage characteristics of nonideal Ti/4H-SiC Schottky barriers
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Forward current-voltage characteristics of nonideal Ti/4H-SiC Schottky contacts with an ideality factor n = 1.1-1.2 in the exponential portion of the characteristics have been analyzed. The nonideality was considered to be a result of the formation of a thin dielectric layer between the deposited titanium layer and 4H-SiC. The following electrical parameters of the contacts were determined from experimental current-voltage characteristics: energy barrier height, thickness of the intermediate dielectric layer, and energy distribution of the density of states at the insulator-semiconductor interface.
- OSTI ID:
- 21260426
- Journal Information:
- Semiconductors, Vol. 43, Issue 2; Other Information: DOI: 10.1134/S1063782609020122; Copyright (c) 2009 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Direct metal contacts printing on 4H-SiC for alpha detectors and inhomogeneous Schottky barriers
Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers
I-V characteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier
Journal Article
·
Tue Dec 15 00:00:00 EST 2020
· Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
·
OSTI ID:21260426
+2 more
Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers
Journal Article
·
Sun May 15 00:00:00 EDT 2016
· Semiconductors
·
OSTI ID:21260426
I-V characteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier
Journal Article
·
Sat Oct 15 00:00:00 EDT 2011
· Semiconductors
·
OSTI ID:21260426
+2 more