Light-emitting diodes of 'Warm' white luminescence on the basis of p-n heterostructures of the InGaN/AlGaN/GaN type coated with phosphors made of yttrium-gadolinium garnets
- Research Institute 'Platan' (Russian Federation)
- Research and Production Center of Optoelectronic Devices 'OPTEL' (Russian Federation)
Electroluminescence spectra and color characteristics of light-emitting diodes of white luminescence based on p-n heterostructures of the InGaN/AlGaN/GaN type with blue emission ({lambda}{sub max} {approx} 455 nm) coated with phosphors of the type of aluminum-yttrium-gadolinium garnets activated with the Ce{sup 3+} ions are studied. The maximum in the excitation spectra of phosphors varies in the range 460-470 nm. The luminescence spectra of phosphors have the peaks from 530 to 590 nm and a width at half-maximum of intensity from 120 to 135 nm depending of the compound composition. The selection of intensities of blue and yellow-orange bands allows one to shift the coordinates of chromaticity of white light-emitting diodes to the region of 'warm' luminescence with a correlated color temperature to T{sub CC} = 3000 K and maximum luminous efficiency up to 50 lm/W.
- OSTI ID:
- 21260360
- Journal Information:
- Semiconductors, Vol. 43, Issue 5; Other Information: DOI: 10.1134/S1063782609050248; Copyright (c) 2009 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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