Self-correction of field-effect transistor characteristics in the mode of spontaneous space-charge ion polarization of gate oxide
Spontaneous space-charge ion polarization of gate oxide in the inversion n-channel silicon field-effect transistor was accomplished in the mode of its Joule heating by the drain current I{sub d}. The transistor characteristics measured at room temperature (T{sub r}) before and after thermal-field treatment show that positive ion (Na{sup +}) localization near the SiO{sub 2}/Si interface is accompanied by an increase in the effective electron mobility (by a factor of {approx} 2.3), steepness, I{sub d}, and by a small decrease in the threshold voltage ({delta}V{sub th} = 0.58 V). At T = T{sub r}, the modified transistor characteristics are retained for months; they can be easily and predictably varied by changing I{sub d} and heating duration.
- OSTI ID:
- 21260359
- Journal Information:
- Semiconductors, Vol. 43, Issue 5; Other Information: DOI: 10.1134/S106378260905025X; Copyright (c) 2009 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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