Fabrication of nanocrystalline silicon layers by plasma enhanced chemical vapor deposition from silicon tetrafluoride
- Russian Academy of Sciences, Institute of Applied Physics (Russian Federation)
- Institute for Physics of Microstructures (Russian Federation)
- Astor, Inc. (Russian Federation)
- VITCON Projectconsult GmbH (Germany)
The data on fabrication of silicon layers on various substrates by plasma enhanced chemical vapor deposition from the (silicon tetrafluoride)-hydrogen system are reported. The emission spectra of the plasma in the system are recorded. The samples were studied by the X-ray diffraction and secondary ion mass spectrometry techniques. The morphologic properties of the surface are examined, and the Raman spectra, the transmittance spectra in the infrared region, and photoluminescence spectra are recorded. The phase composition of the layers corresponds to nanocrystalline silicon, in which the dimensions of coherent-scattering grains vary with the conditions of the preparation process in the range from 3 to 9 nm. The layers exhibit intense photoluminescence at room temperature.
- OSTI ID:
- 21260315
- Journal Information:
- Semiconductors, Vol. 43, Issue 7; Other Information: DOI: 10.1134/S1063782609070288; Copyright (c) 2009 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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