Dielectric waveguide for middle and far infrared radiation
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
The possibility of using the normal skin effect in dielectric waveguides for long-wavelength radiation is analyzed. A design of a waveguide integrated with a heterolaser is suggested, in which an undoped layer of GaAs is clad between heavily-doped n- and p-Al{sub x}Ga{sub 1-x} As alloy layers, reflecting radiation because of the normal skin effect. It is shown that an efficient waveguide can be formed using n-Al{sub x}Ga{sub 1-x} As layers with x < 0.45 and the electron concentration N > 5 x 10{sup 18} cm{sup -3} and p-Al{sub x}Ga{sub 1-x} As layers of any composition with the hole concentration P {>=} 3 x 1019 cm{sup -3}.
- OSTI ID:
- 21260305
- Journal Information:
- Semiconductors, Vol. 43, Issue 8; Other Information: DOI: 10.1134/S1063782609080132; Copyright (c) 2009 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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