Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride

Journal Article · Sun Jun 15 00:00:00 EDT 2008 · Semiconductors

DOI:https://doi.org/10.1134/S1063782608060092· OSTI ID:21255662

Belyaev, A E ^[1]; Boltovets, N S; Ivanov, V N ^[2]; Klad'ko, V P; Kudrik, Ya Ya; Kuchuk, A V; Milenin, V V ^[1]; Sveshnikov, Yu N ^[3]; Sheremet, V N ^[1]

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1. National Academy of Sciences of Ukraine, Lashkarev Institute of Semiconductor Physics (Ukraine)
2. State Enterprise Research Institute Orion (Ukraine)
3. ZAO Elma-Malakhit, Zelenograd (Russian Federation)

A mechanism of charge transport in Au-TiB{sub x}-n-GaN Schottky diodes with a space charge region considerably exceeding the de Broglie wavelength in GaN is studied. Analysis of temperature dependences of current-voltage (I-V) characteristics of forward-biased Schottky barriers showed that, in the temperature range 80-380 K, the charge transport is performed by tunneling along dislocations intersecting the space charge region. Estimation of dislocation density {rho} by the I-V characteristics, in accordance with a model of tunneling along the dislocation line, gives the value {rho} {approx} 1.7 x 10{sup 7} cm{sup -2}, which is close in magnitude to the dislocation density measured by X-ray diffractometry.

• OSTI ID: 21255662
• Journal Information: Semiconductors, Vol. 42, Issue 6; Other Information: DOI: 10.1134/S1063782608060092; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE TRANSPORT
DE BROGLIE WAVELENGTH
DISLOCATIONS
ELECTRIC CONDUCTIVITY
GALLIUM NITRIDES
SCHOTTKY BARRIER DIODES
SPACE CHARGE
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TUNNEL EFFECT
X-RAY DIFFRACTION