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Title: Charge-carrier concentration and temperature in quantum wells of laser heterostructures under spontaneous- and stimulated-emission conditions

Abstract

The charge-carrier concentration and the temperature of hot electrons and holes in quantum-well laser nanostructures in the regimes of spontaneous and stimulated emission are determined as functions of the current density j, with InGaAs/GaAs structures as an example. Under spontaneous-emission conditions, the carrier concentration in the active region of a laser structure grows as the current increases, while carrier heating is insignificant. The spontaneous-emission spectra calculated taking into account forbidden optical transitions agree well with the experimental ones. Under stimulated-emission conditions, the behavior is quite different. When the pump current density is comparatively low (several times above the threshold), the concentration of injected charge carriers levels off and does not grow as the current increases, while the carrier temperature rises considerably. When the current density exceeds the threshold value by orders of magnitude, stabilization of the charge-carrier concentration does not take place; the carrier concentration exhibits a severalfold increase and the carrier temperature rises to about 450 K at j = 80 kA/cm{sup 2}. The number of the charge carriers escaping from the quantum wells into the barriers, which determines the laser efficiency, also increases under these conditions because of the carrier heating. This undesirable effect can be weakened bymore » increasing the depth of the quantum wells.« less

Authors:
 [1];  [2]; ;  [3];  [4]
  1. St. Petersburg State Polytechnical University (Russian Federation)
  2. Voronezh State University (Russian Federation)
  3. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
  4. State University of New York at Stony Brook (United States)
Publication Date:
OSTI Identifier:
21255655
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 42; Journal Issue: 6; Other Information: DOI: 10.1134/S1063782608060171; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE CARRIERS; CURRENT DENSITY; EMISSION SPECTRA; GALLIUM ARSENIDES; HOLES; INDIUM ARSENIDES; QUANTUM WELLS; STIMULATED EMISSION

Citation Formats

Vorob'ev, L. E., E-mail: lvor@rphf.spbstu.ru, Zerova, V L, Borshchev, K S, Sokolova, Z N, Tarasov, I S, and Belenky, G. Charge-carrier concentration and temperature in quantum wells of laser heterostructures under spontaneous- and stimulated-emission conditions. United States: N. p., 2008. Web. doi:10.1134/S1063782608060171.
Vorob'ev, L. E., E-mail: lvor@rphf.spbstu.ru, Zerova, V L, Borshchev, K S, Sokolova, Z N, Tarasov, I S, & Belenky, G. Charge-carrier concentration and temperature in quantum wells of laser heterostructures under spontaneous- and stimulated-emission conditions. United States. https://doi.org/10.1134/S1063782608060171
Vorob'ev, L. E., E-mail: lvor@rphf.spbstu.ru, Zerova, V L, Borshchev, K S, Sokolova, Z N, Tarasov, I S, and Belenky, G. 2008. "Charge-carrier concentration and temperature in quantum wells of laser heterostructures under spontaneous- and stimulated-emission conditions". United States. https://doi.org/10.1134/S1063782608060171.
@article{osti_21255655,
title = {Charge-carrier concentration and temperature in quantum wells of laser heterostructures under spontaneous- and stimulated-emission conditions},
author = {Vorob'ev, L. E., E-mail: lvor@rphf.spbstu.ru and Zerova, V L and Borshchev, K S and Sokolova, Z N and Tarasov, I S and Belenky, G},
abstractNote = {The charge-carrier concentration and the temperature of hot electrons and holes in quantum-well laser nanostructures in the regimes of spontaneous and stimulated emission are determined as functions of the current density j, with InGaAs/GaAs structures as an example. Under spontaneous-emission conditions, the carrier concentration in the active region of a laser structure grows as the current increases, while carrier heating is insignificant. The spontaneous-emission spectra calculated taking into account forbidden optical transitions agree well with the experimental ones. Under stimulated-emission conditions, the behavior is quite different. When the pump current density is comparatively low (several times above the threshold), the concentration of injected charge carriers levels off and does not grow as the current increases, while the carrier temperature rises considerably. When the current density exceeds the threshold value by orders of magnitude, stabilization of the charge-carrier concentration does not take place; the carrier concentration exhibits a severalfold increase and the carrier temperature rises to about 450 K at j = 80 kA/cm{sup 2}. The number of the charge carriers escaping from the quantum wells into the barriers, which determines the laser efficiency, also increases under these conditions because of the carrier heating. This undesirable effect can be weakened by increasing the depth of the quantum wells.},
doi = {10.1134/S1063782608060171},
url = {https://www.osti.gov/biblio/21255655}, journal = {Semiconductors},
issn = {1063-7826},
number = 6,
volume = 42,
place = {United States},
year = {Sun Jun 15 00:00:00 EDT 2008},
month = {Sun Jun 15 00:00:00 EDT 2008}
}