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Title: Cyclic behavior of ultrafast self-modulation of the light-absorption spectrum under conditions of pump and stimulated emission in GaAs

Abstract

Under picosecond photogeneration of charge carriers in GaAs, accompanied by intense stimulated emission of the semiconductor itself, ultrafast self-modulation of its light-absorption spectrum takes place, which consists in the appearance of regions of local absorption enhancement (bumps) in the spectrum. The ultrafast self-modulation is found to exhibit a cyclic behavior; i.e., the pattern of the self-modulation of the spectrum (the number and spectral position of the bumps) is repeated after a certain time T{sub c} falling in the picosecond range. The cycle period T{sub c} varies over the time span of the pump pulse and depends on the pulse energy, which means that T{sub c} is a function of the pump intensity. Assuming that self-modulation of the absorption reflects self-modulation of the charge-carrier energy distribution in GaAs under pumping, experimental results can be formulated as follows: in the process of the ultrafast self-modulation, deviations of the occupancies of different energy levels from the Fermi distribution evolve with time in a mutually related way; the distribution of the occupancy depletion in the conduction band repeats cyclically in time; and the cycle period decreases as the intensity of the pump increases.

Authors:
;  [1];  [2]
  1. Russian Academy of Sciences, Institute of Radio Engineering and Electronics (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
21255621
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 42; Journal Issue: 9; Other Information: DOI: 10.1134/S1063782608090078; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; ABSORPTION SPECTRA; CHARGE CARRIERS; ENERGY LEVELS; ENERGY SPECTRA; GALLIUM ARSENIDES; MODULATION; SEMICONDUCTOR MATERIALS; STIMULATED EMISSION

Citation Formats

Ageeva, N N, Bronevoi, I. L., E-mail: bil@cplire.ru, Krivonosov, A N, and Nalet, T A. Cyclic behavior of ultrafast self-modulation of the light-absorption spectrum under conditions of pump and stimulated emission in GaAs. United States: N. p., 2008. Web. doi:10.1134/S1063782608090078.
Ageeva, N N, Bronevoi, I. L., E-mail: bil@cplire.ru, Krivonosov, A N, & Nalet, T A. Cyclic behavior of ultrafast self-modulation of the light-absorption spectrum under conditions of pump and stimulated emission in GaAs. United States. https://doi.org/10.1134/S1063782608090078
Ageeva, N N, Bronevoi, I. L., E-mail: bil@cplire.ru, Krivonosov, A N, and Nalet, T A. 2008. "Cyclic behavior of ultrafast self-modulation of the light-absorption spectrum under conditions of pump and stimulated emission in GaAs". United States. https://doi.org/10.1134/S1063782608090078.
@article{osti_21255621,
title = {Cyclic behavior of ultrafast self-modulation of the light-absorption spectrum under conditions of pump and stimulated emission in GaAs},
author = {Ageeva, N N and Bronevoi, I. L., E-mail: bil@cplire.ru and Krivonosov, A N and Nalet, T A},
abstractNote = {Under picosecond photogeneration of charge carriers in GaAs, accompanied by intense stimulated emission of the semiconductor itself, ultrafast self-modulation of its light-absorption spectrum takes place, which consists in the appearance of regions of local absorption enhancement (bumps) in the spectrum. The ultrafast self-modulation is found to exhibit a cyclic behavior; i.e., the pattern of the self-modulation of the spectrum (the number and spectral position of the bumps) is repeated after a certain time T{sub c} falling in the picosecond range. The cycle period T{sub c} varies over the time span of the pump pulse and depends on the pulse energy, which means that T{sub c} is a function of the pump intensity. Assuming that self-modulation of the absorption reflects self-modulation of the charge-carrier energy distribution in GaAs under pumping, experimental results can be formulated as follows: in the process of the ultrafast self-modulation, deviations of the occupancies of different energy levels from the Fermi distribution evolve with time in a mutually related way; the distribution of the occupancy depletion in the conduction band repeats cyclically in time; and the cycle period decreases as the intensity of the pump increases.},
doi = {10.1134/S1063782608090078},
url = {https://www.osti.gov/biblio/21255621}, journal = {Semiconductors},
issn = {1063-7826},
number = 9,
volume = 42,
place = {United States},
year = {Mon Sep 15 00:00:00 EDT 2008},
month = {Mon Sep 15 00:00:00 EDT 2008}
}