Comparative analysis of limiting photoconversion efficiency of usual solar cells and solar cells with quantum wells

Journal Article · Wed Oct 15 00:00:00 EDT 2008 · Semiconductors

DOI:https://doi.org/10.1134/S106378260810014X· OSTI ID:21255604

Sokolovskii, I O ^[1]

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1. National Academy of Sciences of Ukraine, Lashkarev Institute of Semiconductor Physics (Ukraine)

An analytical approach to calculation of limiting photoconversion efficiency {eta} in solar cells with quantum wells is suggested and the value of {eta} is compared with the limiting photoconversion efficiency of usual solar cells. In the described approach, along with bulk recombination, surface recombination at the barrier semiconductor-quantum well interfaces is taken into account. Features of formation of open-circuit voltage in Si-based p-i-n structures with long lifetimes of nonequilibrium charge carriers and in GaAs-based structures with short lifetimes of nonequilibrium carriers are compared.

• OSTI ID: 21255604
• Journal Information: Semiconductors, Vol. 42, Issue 10; Other Information: DOI: 10.1134/S106378260810014X; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE CARRIERS
ELECTRIC POTENTIAL
GALLIUM ARSENIDES
INTERFACES
QUANTUM WELLS
RECOMBINATION
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR ENERGY CONVERSION
SURFACES