skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Effect of Te on the self-activated emission of ZnSe

Journal Article · · Semiconductors
 [1]
  1. Moscow Power Engineering Institute (Technical University) (Russian Federation)

An interpretation of the optical properties of ZnSe is suggested. The interpretation is based on the anticrossing band theory, which specifies the oxygen-induced splitting of the conduction band. It is shown that the new approach provides a means for understanding the specific features of the self-activated luminescence in ZnSe:O and (ZnSe:O):Te. The effect of small (<1%) Te additives on the luminescence of ZnSe:Te in the edge spectral region is interpreted. The model of electronic transitions is presented.

OSTI ID:
21255577
Journal Information:
Semiconductors, Vol. 42, Issue 13; Other Information: DOI: 10.1134/S1063782608130095; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
Country of Publication:
United States
Language:
English

Similar Records

Oxygen in luminescence of ZnSe(Te)
Journal Article · Fri Sep 01 00:00:00 EDT 1995 · Semiconductors · OSTI ID:21255577

Band structure and optical properties of sinusoidal superlattices: ZnSe{sub 1-x}Te{sub x}
Journal Article · Sat Apr 15 00:00:00 EDT 2000 · Physical Review. B, Condensed Matter and Materials Physics · OSTI ID:21255577

Investigation of the effect of oxygen on the cathodoluminescence spectra and band gap of the ZnS{sub x}Se{sub 1-x} alloy
Journal Article · Sun Oct 15 00:00:00 EDT 2006 · Semiconductors · OSTI ID:21255577