Electrical and galvanomagnetic properties of cadmium telluride films synthesized under highly nonequilibrium conditions
- St. Petersburg Technological Institute (Technical University) (Russian Federation)
The results of experimental studies of electrical and galvanomagnetic properties of CdTe films synthesized under highly nonequilibrium conditions via vapor condensation on a substrate cooled with liquid nitrogen are reported. The temperature dependences of dark conductivity, current-voltage characteristics with and without illumination, temperature dependences of the Hall coefficient R{sub H} and effective Hall mobility {mu}{sub H} in the planar geometry, and dark current-voltage characteristics in the sandwich geometry are reported. Anisotropy of conductivity is revealed. It is shown that the electrical and galvanomagnetic properties of the films are consistently described by a percolation model of charge transport, according to which, at high temperatures, the charge transport takes place over the percolation level of the valence band, and at low temperatures, over the percolation level of the impurity band.
- OSTI ID:
- 21255566
- Journal Information:
- Semiconductors, Vol. 42, Issue 11; Other Information: DOI: 10.1134/S1063782608110067; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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