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Title: Edge electroluminescence of the effective silicon point-junction light-emitting diode in the temperature range 80-300 K

Abstract

The edge electroluminescence spectra of silicon point-junction light-emitting diodes with a p-n junction area of 0.008 mm{sup 2} are studied at temperatures ranging from 80 to 300 K. Unprecedentedly high stability of the position of the spectral peak is observed at temperatures in the range between 130 and 300 K. The spectral characteristics of the light emitting diodes are studied at 80 K at different current densities up to 25 kA/cm{sup 2}. In contrast to the earlier reported data obtained at 300 K, the data obtained at 80 K do not show any noticeable Augerrecombination-related decrease in the quantum efficiency. From an analysis of the electroluminescence spectra at 80 K in a wide range of currents, it follows that radiative annihilation of free excitons is not a governing mechanism of electroluminescence in the entire emitting region in the base of the point-junction light-emitting diode at all currents used in the experiment.

Authors:
 [1]
  1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation), E-mail: Emelyanov@mail.ioffe.ru
Publication Date:
OSTI Identifier:
21255556
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 42; Journal Issue: 11; Other Information: DOI: 10.1134/S1063782608110201; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNIHILATION; CURRENT DENSITY; ELECTROLUMINESCENCE; EXCITONS; LIGHT EMITTING DIODES; P-N JUNCTIONS; QUANTUM EFFICIENCY; SILICON; SPECTRA; STABILITY; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0400-1000 K

Citation Formats

Emel'yanov, A. M. Edge electroluminescence of the effective silicon point-junction light-emitting diode in the temperature range 80-300 K. United States: N. p., 2008. Web. doi:10.1134/S1063782608110201.
Emel'yanov, A. M. Edge electroluminescence of the effective silicon point-junction light-emitting diode in the temperature range 80-300 K. United States. https://doi.org/10.1134/S1063782608110201
Emel'yanov, A. M. 2008. "Edge electroluminescence of the effective silicon point-junction light-emitting diode in the temperature range 80-300 K". United States. https://doi.org/10.1134/S1063782608110201.
@article{osti_21255556,
title = {Edge electroluminescence of the effective silicon point-junction light-emitting diode in the temperature range 80-300 K},
author = {Emel'yanov, A. M.},
abstractNote = {The edge electroluminescence spectra of silicon point-junction light-emitting diodes with a p-n junction area of 0.008 mm{sup 2} are studied at temperatures ranging from 80 to 300 K. Unprecedentedly high stability of the position of the spectral peak is observed at temperatures in the range between 130 and 300 K. The spectral characteristics of the light emitting diodes are studied at 80 K at different current densities up to 25 kA/cm{sup 2}. In contrast to the earlier reported data obtained at 300 K, the data obtained at 80 K do not show any noticeable Augerrecombination-related decrease in the quantum efficiency. From an analysis of the electroluminescence spectra at 80 K in a wide range of currents, it follows that radiative annihilation of free excitons is not a governing mechanism of electroluminescence in the entire emitting region in the base of the point-junction light-emitting diode at all currents used in the experiment.},
doi = {10.1134/S1063782608110201},
url = {https://www.osti.gov/biblio/21255556}, journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 42,
place = {United States},
year = {Sat Nov 15 00:00:00 EST 2008},
month = {Sat Nov 15 00:00:00 EST 2008}
}