The Effect of Amorphization Conditions on the Measured Activation of Source Drain Extension Implants
- Varian Semiconductor Equipment, 35 Dory Road, Gloucester, MA 01930 (United States)
- Surrey Ion Beam Centre, Nodus Laboratory, University of Surrey, Guildford, Surrey. GU2 7XH (United Kingdom)
- External Development and Manufacturing, Texas Instruments, 13121 TI Boulevard, MS 365, Dallas, TX 75243 (United States)
Un-patterned wafers were processed using low-dose Indium or medium-dose Germanium pre-amorphization implants (PAI) followed by p-type dopant implants of BF{sub 2} or carborane (CBH). The wafers were then annealed by RTA (spike), laser anneal (LSA) or combination of LSA and spike. Active dopant distributions calculated from SIMS and sheet resistance measurements compared favorably with those determined by differential Hall, which is a challenging technique for shallow profiles. The trends in B diffusion behavior and activation are discussed in relation to the different implant damage budgets, damage evolution during the anneals and presence of fluorine. In particular, for low thermal budget LSA only anneals, CBH implants appear to give higher activation than BF{sub 2} due to the absence of fluorine.
- OSTI ID:
- 21251725
- Journal Information:
- AIP Conference Proceedings, Vol. 1066, Issue 1; Conference: 17. international conference on ion implantation technology, Monterey, CA (United States), 8-13 Jun 2008; Other Information: DOI: 10.1063/1.3033691; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Rapid thermal annealing of ion implanted silicon
Surface Oxidation Effects During Low Energy BF{sub 2}{sup +} Ion Implantation