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Title: Improvement of Contact Resistance with Molecular Ion Implantation

Abstract

Basic characteristics of ClusterBoron (B{sub 18}H{sub 22}) implantation were investigated for improving contact resistance in DRAM devices. Generally, {sup 49}BF{sub 2} has been widely used for contact implant application in DRAM manufacturing because of its higher productivity compared to monomer boron ({sup 11}B). However, because of limited activation in a low thermal budget ({approx}800 deg. C) anneal, the sheet resistance was saturated for doses over 5x10{sup 15} ions/cm{sup 2}. Although many investigations have been reported, such as {sup 30}BF implant mixed implant with monomer boron etc., no practical solution has been found for dramatic improvement of contact resistance in a productive manner. B{sub 18}H{sub 22} was developed to overcome the productivity limitations encountered in low energy, high dose boron implantation and the limited activation of {sup 49}BF{sub 2} due to co-implanted fluorine. In this study, basic characterization of the B{sub 18}H{sub 22} contact implant was performed through sheet resistance, SIMS (Secondary Ion Mass Spectrometry) and XTEM (cross-sectional transmission electron microscopy). The B{sub 18}H{sub 22} implants showed lower sheet resistance than conventional {sup 49}BF{sub 2} for 5x10{sup 15} ions/cm{sup 2} on bare wafer tests. Through XTEM study, we found the activation behavior of both B{sub 18}H{sub 22} and {sup 49}BF{sub 2}more » were directly related with the amorphous layer thickness and residual defects from low thermal budget anneal. PMOS contact resistance in the sub-70 nm device by B{sub 18}H{sub 22} implantation showed considerable improvement (about 30%), showing B{sub 18}H{sub 22} could replace the BF{sub 2} for contact implant in contact resistance implant.« less

Authors:
 [1]; ; ; ; ; ;  [2]; ; ; ; ;  [1];  [3]
  1. Axcelis Technologies Inc., 108 Cherry Hill Drive, Beverly, MA 01915 (United States)
  2. Hynix Semiconductor Inc., San 136-1 Ami, Bubal, Ichon, Kyoungki-do, 467-701 (Korea, Republic of)
  3. Sungkyunkwan University., 300 Cheoncheon, Jangan, Suwon, Kyoungki-do, 440-746 (Korea, Republic of)
Publication Date:
OSTI Identifier:
21251714
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1066; Journal Issue: 1; Conference: 17. international conference on ion implantation technology, Monterey, CA (United States), 8-13 Jun 2008; Other Information: DOI: 10.1063/1.3033673; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORANES; BORON; BORON 11; BORON FLUORIDES; BORON HYDRIDES; CRYSTAL DEFECTS; ELECTRON MICROSCOPES; FLUORINE; ION IMPLANTATION; ION MICROPROBE ANALYSIS; LAYERS; MASS SPECTROSCOPY; MOLECULAR IONS; MONOMERS; SHEETS; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Lee, Kyung Won, Sungkyunkwan University., 300 Cheoncheon, Jangan, Suwon, Kyoungki-do, 440-746, Lee, Jin Ku, Oh, Jae Geun, Ju, Min Ae, Jeon, Seung Joon, Ku, Ja Chun, Park, Sung Ki, Huh, Tae Hoon, Kim, Steve, Ra, Geum Joo, Harris, Mark A, Reece, Ronald N, and Yoon, Dae Ho. Improvement of Contact Resistance with Molecular Ion Implantation. United States: N. p., 2008. Web. doi:10.1063/1.3033673.
Lee, Kyung Won, Sungkyunkwan University., 300 Cheoncheon, Jangan, Suwon, Kyoungki-do, 440-746, Lee, Jin Ku, Oh, Jae Geun, Ju, Min Ae, Jeon, Seung Joon, Ku, Ja Chun, Park, Sung Ki, Huh, Tae Hoon, Kim, Steve, Ra, Geum Joo, Harris, Mark A, Reece, Ronald N, & Yoon, Dae Ho. Improvement of Contact Resistance with Molecular Ion Implantation. United States. https://doi.org/10.1063/1.3033673
Lee, Kyung Won, Sungkyunkwan University., 300 Cheoncheon, Jangan, Suwon, Kyoungki-do, 440-746, Lee, Jin Ku, Oh, Jae Geun, Ju, Min Ae, Jeon, Seung Joon, Ku, Ja Chun, Park, Sung Ki, Huh, Tae Hoon, Kim, Steve, Ra, Geum Joo, Harris, Mark A, Reece, Ronald N, and Yoon, Dae Ho. 2008. "Improvement of Contact Resistance with Molecular Ion Implantation". United States. https://doi.org/10.1063/1.3033673.
@article{osti_21251714,
title = {Improvement of Contact Resistance with Molecular Ion Implantation},
author = {Lee, Kyung Won and Sungkyunkwan University., 300 Cheoncheon, Jangan, Suwon, Kyoungki-do, 440-746 and Lee, Jin Ku and Oh, Jae Geun and Ju, Min Ae and Jeon, Seung Joon and Ku, Ja Chun and Park, Sung Ki and Huh, Tae Hoon and Kim, Steve and Ra, Geum Joo and Harris, Mark A and Reece, Ronald N and Yoon, Dae Ho},
abstractNote = {Basic characteristics of ClusterBoron (B{sub 18}H{sub 22}) implantation were investigated for improving contact resistance in DRAM devices. Generally, {sup 49}BF{sub 2} has been widely used for contact implant application in DRAM manufacturing because of its higher productivity compared to monomer boron ({sup 11}B). However, because of limited activation in a low thermal budget ({approx}800 deg. C) anneal, the sheet resistance was saturated for doses over 5x10{sup 15} ions/cm{sup 2}. Although many investigations have been reported, such as {sup 30}BF implant mixed implant with monomer boron etc., no practical solution has been found for dramatic improvement of contact resistance in a productive manner. B{sub 18}H{sub 22} was developed to overcome the productivity limitations encountered in low energy, high dose boron implantation and the limited activation of {sup 49}BF{sub 2} due to co-implanted fluorine. In this study, basic characterization of the B{sub 18}H{sub 22} contact implant was performed through sheet resistance, SIMS (Secondary Ion Mass Spectrometry) and XTEM (cross-sectional transmission electron microscopy). The B{sub 18}H{sub 22} implants showed lower sheet resistance than conventional {sup 49}BF{sub 2} for 5x10{sup 15} ions/cm{sup 2} on bare wafer tests. Through XTEM study, we found the activation behavior of both B{sub 18}H{sub 22} and {sup 49}BF{sub 2} were directly related with the amorphous layer thickness and residual defects from low thermal budget anneal. PMOS contact resistance in the sub-70 nm device by B{sub 18}H{sub 22} implantation showed considerable improvement (about 30%), showing B{sub 18}H{sub 22} could replace the BF{sub 2} for contact implant in contact resistance implant.},
doi = {10.1063/1.3033673},
url = {https://www.osti.gov/biblio/21251714}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1066,
place = {United States},
year = {Mon Nov 03 00:00:00 EST 2008},
month = {Mon Nov 03 00:00:00 EST 2008}
}