Characteristics of Cluster Implantation and Low Diffusion Annealing
- Nissin Ion Equipment Co., Ltd., 575 Kuze-Tonoshiro-cho, Minami-ku, Kyoto, 601-8205 (Japan)
- Semiconductor Leading Edge Technologies, Inc, (Selete), 16-1 Onogawa, Tsukuba-shi, 305-8569 (Japan)
Beyond 45 nm device fabrication, it is recognized that the ultra-shallow junction (USJ) formation is required, which is achieved by the ultra-low energy ion implantation and ultra-low diffusion annealing. For this purpose, Cluster ion implantation (CII) and the Flash lamp annealing (FLA) activation processes have been developed. In this paper, we introduce characteristics of activation using B{sub 18}Hx{sup +} implantation with FLA, which are applied to a source drain extension (SDE) for pMOSFET in Hgh-k/metal process. We will prove that the combined process of B{sub 18}Hx{sup +} and FLA can make the low sheet resistance and the fine crystal recovery for USJ formation such a SDE. Moreover, the combined process of C{sub 7}Hx{sup +} implantation and FLA can make the high stress region for nMOSFET by the high substitutional Carbon. If both of B{sub 18}Hx{sup +} implantation and C{sub 7}Hx{sup +} implantation with FLA are applied to High-k/metal process, it will give the highest performance. The combination of FLA and cluster ion implanter ''CLARIS'' which is developed for IC fabrication, will promise the most powerful performance beyond 45 nm node device.
- OSTI ID:
- 21251701
- Journal Information:
- AIP Conference Proceedings, Vol. 1066, Issue 1; Conference: 17. international conference on ion implantation technology, Monterey, CA (United States), 8-13 Jun 2008; Other Information: DOI: 10.1063/1.3033657; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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