Cluster Size Dependence of Etching by Reactive Gas Cluster Ion Beams
- Graduate school of engineering, University of Hyogo 2167 Shosha, Himeji, Hyogo, 671-2280 (Japan)
Mass-selected reactive gas cluster ion beams (GCIB) were formed using a permanent magnetic filter. Irradiations of CO{sub 2} GCIB on amorphous carbon films and irradiations of SF{sub 6} and SF{sub 6}/Ar mixed GCIB on Si surfaces were performed to study the cluster size dependence on etching yields by reactive GCIB. The reactive sputtering yield of carbon by CO{sub 2} GCIB was almost ten times higher than that by Ar GCIB. In the case of (CO{sub 2}){sub 20000} GCIB with energy of 20 keV (1 eV/atom), it showed the high sputtering yield of 200 atoms/ion, however, there was little crater formation on the carbon surface. It is thought that very soft etching without crater formation would take place in this condition. In the case of SF{sub 6} GCIB on Si, the etching depth of Si showed maximum value when the fraction of SF{sub 6} to Ar was around 50%. As the etching yield was higher than pure SF{sub 6} GCIB, there was a strong ion assisted etching effects in the case of Ar/SF{sub 6} mixed cluster ion irradiations.
- OSTI ID:
- 21251699
- Journal Information:
- AIP Conference Proceedings, Vol. 1066, Issue 1; Conference: 17. international conference on ion implantation technology, Monterey, CA (United States), 8-13 Jun 2008; Other Information: DOI: 10.1063/1.3033654; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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