Manufacturing Assessment of an XeF{sub 2} In-Situ Clean Process for Mitigation of Species Cross Contamination

Journal Article · Mon Nov 03 00:00:00 EST 2008 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3033638· OSTI ID:21251687

Dunn, James P; Rolland, James L; Lundquist, Paul ^[1]; Bishop, Steve ^[2]

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1. Atmel Corporation, Colorado Springs, Colorado, 80906 (United States)
2. ATMI, Danbury Connecticut, 06810 (United States)

The residue buildup in an ion source can be energetically transported down the ion implanter beamline delivering unwanted dopants to the target area. Of particular concern are contaminants within one AMU of the target species such as {sup 50}PF{sup +} in a {sup 49}BF{sub 2}{sup +} beam causing counter-doping dose errors. Significant beam currents attributable to memory effect have been observed more than an hour after the species gas has been changed. This paper shows how Atmel Corporation, Colorado Springs, Colorado evaluated a new XeF{sub 2} in-situ clean process as an effective means of reducing the risk of species cross contamination.

• OSTI ID: 21251687
• Journal Information: AIP Conference Proceedings, Vol. 1066, Issue 1; Conference: 17. international conference on ion implantation technology, Monterey, CA (United States), 8-13 Jun 2008; Other Information: DOI: 10.1063/1.3033638; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
43 PARTICLE ACCELERATORS
BEAM CURRENTS
CONTAMINATION
DOPED MATERIALS
HAZARDS
ION BEAMS
ION IMPLANTATION
ION SOURCES
MANUFACTURING
XENON FLUORIDES