Ion beam induced charge collection (IBICC) from integrated circuit test structures using a 10 MeV carbon microbeam

Guo, B N; El Bouanani, M; Duggan, J L; McDaniel, F D; Renfrow, S N; Doyle, B L; Walsh, D S; Aton, T J

doi:10.1063/1.59108

Title: Ion beam induced charge collection (IBICC) from integrated circuit test structures using a 10 MeV carbon microbeam

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Abstract

As feature sizes of Integrated Circuits (ICs) continue to shrink, the sensitivity of these devices, particularly SRAMs and DRAMs, to natural radiation is increasing. In this paper, the Ion Beam Induced Charge Collection (IBICC) technique is utilized to simulate neutron-induced Si recoil effects in ICs. The IBICC measurements, conducted at the Sandia National Laboratories, employed a 10 MeV carbon microbeam with 1{mu}m diameter spot to scan test structures on specifically designed ICs. With the aid of IC layout information, an analysis of the charge collection efficiency from different test areas is presented.

Authors:

Guo, B N; El Bouanani, M; Duggan, J L; McDaniel, F D ^[1]; Renfrow, S N ^[1]; Doyle, B L; Walsh, D S ^[2]; Aton, T J ^[3]

Ion Beam Modification and Analysis Laboratory, Department of Physics, University of North Texas, Denton, Texas 76203 (United States)
Ion Beam Materials Research Laboratory, Sandia National Laboratories, MS 1056, PO Box 5800, Albuquerque, New Mexico 87185 (United States)
Silicon Technology Development, Texas Instruments Inc., PO Box 650311, MS 3704, Dallas, Texas 75265 (United States)

Publication Date:: Thu Jun 10 00:00:00 EDT 1999

OSTI Identifier:: 21205542

Resource Type:: Journal Article

Journal Name:: AIP Conference Proceedings

Additional Journal Information:: Journal Volume: 475; Journal Issue: 1; Conference: 15.International conference on the application of accelerators in research and industry, Denton, TX (United States), 4-7 Nov 1998; Other Information: DOI: 10.1063/1.59108; (c) 1999 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARBON IONS; CHARGE COLLECTION; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUITS; ION BEAMS; IRRADIATION; MEV RANGE; NEUTRON FLUENCE; PHYSICAL RADIATION EFFECTS; RECOILS; SANDIA NATIONAL LABORATORIES; SENSITIVITY; SILICON

Citation Formats


                    Guo, B N, El Bouanani, M, Duggan, J L, McDaniel, F D, Renfrow, S N, Ion Beam Materials Research Laboratory, Sandia National Laboratories, MS 1056, PO Box 5800, Albuquerque, New Mexico 87185, Doyle, B L, Walsh, D S, and Aton, T J. Ion beam induced charge collection (IBICC) from integrated circuit test structures using a 10 MeV carbon microbeam.  United States: N. p., 1999. 
        Web.  doi:10.1063/1.59108.

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                    Guo, B N, El Bouanani, M, Duggan, J L, McDaniel, F D, Renfrow, S N, Ion Beam Materials Research Laboratory, Sandia National Laboratories, MS 1056, PO Box 5800, Albuquerque, New Mexico 87185, Doyle, B L, Walsh, D S, & Aton, T J. Ion beam induced charge collection (IBICC) from integrated circuit test structures using a 10 MeV carbon microbeam.  United States.  https://doi.org/10.1063/1.59108

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                    Guo, B N, El Bouanani, M, Duggan, J L, McDaniel, F D, Renfrow, S N, Ion Beam Materials Research Laboratory, Sandia National Laboratories, MS 1056, PO Box 5800, Albuquerque, New Mexico 87185, Doyle, B L, Walsh, D S, and Aton, T J. 1999.  
        "Ion beam induced charge collection (IBICC) from integrated circuit test structures using a 10 MeV carbon microbeam".  United States.  https://doi.org/10.1063/1.59108.

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@article{osti_21205542,

  title        = {Ion beam induced charge collection (IBICC) from integrated circuit test structures using a 10 MeV carbon microbeam},

  author       = {Guo, B N and El Bouanani, M and Duggan, J L and McDaniel, F D and Renfrow, S N and Ion Beam Materials Research Laboratory, Sandia National Laboratories, MS 1056, PO Box 5800, Albuquerque, New Mexico 87185 and Doyle, B L and Walsh, D S and Aton, T J},

  abstractNote = {As feature sizes of Integrated Circuits (ICs) continue to shrink, the sensitivity of these devices, particularly SRAMs and DRAMs, to natural radiation is increasing. In this paper, the Ion Beam Induced Charge Collection (IBICC) technique is utilized to simulate neutron-induced Si recoil effects in ICs. The IBICC measurements, conducted at the Sandia National Laboratories, employed a 10 MeV carbon microbeam with 1{mu}m diameter spot to scan test structures on specifically designed ICs. With the aid of IC layout information, an analysis of the charge collection efficiency from different test areas is presented.},

  doi          = {10.1063/1.59108},

  url          = {https://www.osti.gov/biblio/21205542},
  journal      = {AIP Conference Proceedings},

  issn         = {0094-243X},

  number       = 1,

  volume       = 475,

  place        = {United States},

  year         = {Thu Jun 10 00:00:00 EDT 1999},

  month        = {Thu Jun 10 00:00:00 EDT 1999}

}

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