Laser damage threshold of SiO{sub 2} films by the photoacoustic mirage technique

Journal Article · Mon Mar 15 00:00:00 EST 1999 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.58213· OSTI ID:21205271

Alvisi, M; Vasanelli, L ^[1]; De Nunzio, G; Diso, D; Perrone, M R; Protopapa, L ^[2]; Rizzo, A ^[3]; Scaglione, S ^[4]

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1. Dipartimento di Scienza dei Materiali, Universita di Lecce, 73100 Lecce (Italy)
2. Dipartimento di Fisica, Universita di Lecce, 73100 Lecce (Italy)
3. PASTIS-CNRSM, ss 7 Appia, km 713, 72100 Brindisi (Italy)
4. Laboratorio Film Sottili, Enea Casaccia, 00060 S. Maria di Galeria, Roma (Italy)

SiO{sub 2} thin films of 240 nm thickness have been deposited by a dual-ion-beam sputtering technique using argon or xenon ions mixed with oxygen ions in the assisting ion beam and the role of the assisting ion beam and of the substrate temperature on the laser damage threshold at 308 nm (XeCl excimer laser) has been investigated by the photo acoustic mirage technique. It has been found that the laser damage threshold was quite dependent on the film deposition conditions. The sample grown at a substrate temperature of 300 deg. C and with the argon ion assisting beam was characterized by the highest damage threshold ( congruent with 10 J/cm{sup 2})

• OSTI ID: 21205271
• Journal Information: AIP Conference Proceedings, Vol. 463, Issue 1; Conference: 10. International conference on photoacoustic and photothermal phenomena, Rome (Italy), 23-27 Aug 1998; Other Information: DOI: 10.1063/1.58213; (c) 1999 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ARGON IONS
DAMAGE
DIELECTRIC MATERIALS
ENERGY BEAM DEPOSITION
EXCIMER LASERS
ION BEAMS
LASER RADIATION
OXYGEN IONS
PHOTOACOUSTIC SPECTROSCOPY
SILICON OXIDES
SPUTTERING
SUBSTRATES
THIN FILMS
XENON IONS