X-ray photoemission electron microscopy for the study of semiconductor materials

Journal Article · Tue Nov 24 00:00:00 EST 1998 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.56923· OSTI ID:21202350

Anders, Simone; Stammler, Thomas; Padmore, Howard A ^[1]; Terminello, Louis J; Jankowski, Alan F ^[2]; Stoehr, Joachim ^[3]; Diaz, Javier ^[4]; Cossy-Favre, Aline ^[5]; Singh, Sangeet ^[6]

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1. Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)
2. Lawrence Livermore National Laboratory, 7000 East Ave., Livermore, California 94550 (United States)
3. IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States)
4. Departamento de Fisic, Facultad de Ciencias, Universidad de Oviedo, Avda. Calvo Sotelo s/n, Oviedo, 33007 (Spain)
5. EMPA, Duebendorf, Ueberlandstrasse 129, 8600 Duebendorf (Switzerland)
6. Center for X-ray Lithography, University of Wisconsin-Madison, Stoughton, Wisconsin 53589 (United States)

Photoemission Electron Microscopy using X-rays (X-PEEM) is a novel combination of two established materials analysis techniques--PEEM using UV light, and Near Edge X-ray Absorption Fine Structure (NEXAFS) spectroscopy. This combination allows the study of elemental composition and bonding structure of the sample by NEXAFS spectroscopy with a high spatial resolution given by the microscope. A simple, two lens, 10 kV operation voltage PEEM has been used at the Stanford Synchrotron Radiation Laboratory and at the Advanced Light Source (ALS) in Berkeley to study various problems including materials of interest for the semiconductor industry. In the present paper we give a short overview over the method and the instrument which was used, and describe in detail a number of applications. These applications include the study of the different phases of titanium disilicide, various phases of boron nitride, and the analysis of small particles. A brief outlook is given on possible new fields of application of the PEEM technique, and the development of new PEEM instruments.

• OSTI ID: 21202350
• Journal Information: AIP Conference Proceedings, Vol. 449, Issue 1; Conference: 1998 international conference on characterization and metrology for ULSI technology, Gaithersburg, MD (United States), 23-27 Mar 1998; Other Information: DOI: 10.1063/1.56923; (c) 1998 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ABSORPTION SPECTROSCOPY
ADVANCED LIGHT SOURCE
BORON NITRIDES
ELECTRON MICROSCOPY
EMISSION SPECTROSCOPY
FINE STRUCTURE
PHOTOELECTRON SPECTROSCOPY
PHOTOEMISSION
SEMICONDUCTOR MATERIALS
SPATIAL RESOLUTION
TITANIUM SILICIDES
X-RAY SPECTROSCOPY