Development of electrodeposited ZnTe layers as window materials in ZnTe/CdTe/CdHgTe multi-layer solar cells
- Solar Energy Group, Materials and Engineering Research Institute, Faculty of Arts, Computing, Engineering and Sciences, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom)
Zinc telluride (ZnTe) thin films have been deposited on glass/conducting glass substrates using a low-cost electrodeposition method. The resulting films have been characterized using various techniques in order to optimize growth parameters. X-ray diffraction (XRD) has been used to identify the phases present in the films. Photoelectrochemical (PEC) cell and optical absorption measurements have been performed to determine the electrical conductivity type, and the bandgap of the layers, respectively. It has been confirmed by XRD measurement that the deposited layers mainly consist of ZnTe phases. The PEC measurements indicate that the ZnTe layers are p-type in electrical conduction and optical absorption measurements show that their bandgap is in the range 2.10-2.20 eV. p-Type ZnTe window materials have been used in CdTe based solar cell structures, following new designs of graded bandgap multi-layer solar cells. The structures of FTO/ZnTe/CdTe/metal and FTO/ZnTe/CdTe/CdHgTe/metal have been investigated. The results are presented in this paper using observed experimental data.
- OSTI ID:
- 21192600
- Journal Information:
- Materials Characterization, Vol. 60, Issue 2; Other Information: DOI: 10.1016/j.matchar.2008.07.009; PII: S1044-5803(08)00211-8; Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 1044-5803
- Country of Publication:
- United States
- Language:
- English
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