Modeling the plastic relaxation onset in realistic SiGe islands on Si(001)
- Dipartimento di Scienza dei Materiali and L-NESS, Universita degli Studi di Milano-Bicocca, Via Cozzi 53, I-20125 Milano (Italy)
- Institute of Semiconductor Physics, Novosibirsk 630090 (Russian Federation)
A detailed investigation of plastic relaxation onset in heteroepitaxial SiGe islands on Si(001) is presented. The strain field induced by a straight misfit-dislocation segment is modeled by finite-element-method (FEM) calculations in three dimensions, fully taking into account the interaction with the multifaceted free surfaces of realistic islands. The total elastic energies before and after the placement of a 60 deg. dislocation segment in the most favorable position are therefore evaluated by a full FEM approach, for different island sizes and compositions. The critical volumes with composition for inserting the dislocation are finally obtained and successfully compared with the data in a report by Marzegalli et al. [Phys. Rev. Lett. 99, 235505 (2007)], where experimental values are compared to a simpler approach.
- OSTI ID:
- 21192479
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 78, Issue 18; Other Information: DOI: 10.1103/PhysRevB.78.184104; (c) 2008 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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