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Title: Silane injection in a high-density low-pressure plasma system and its influence on the deposition kinetics and material properties of SiO{sub 2}

Abstract

High-rate, low temperature deposition is an essential requirement for industrial fabrication technology to be suitable for the deposition of optical and protective coatings. High-density, low-pressure plasmas have received significant attention for such applications due to their ability to create large and controllable ion fluxes onto the substrate. In this study, the high-rate deposition of silica films from a silane and oxygen gas mixture in a high-density plasma system based on a matrix distributed electron cyclotron resonance (MDECR) plasma source is investigated using directional jet injection of undiluted silane. The influence of process parameters such as the microwave power, radio frequency biasing of the substrate holder, and gas flows on the OH content of the oxide films is studied using phase-modulated spectroscopic ellipsometry (SE), Fourier transform infrared (FTIR) spectroscopy, and transmission measurements. The results of the measurements, taken at various points across the wafer, show a decrease in the thickness-normalized OH concentration in the areas of higher deposition rates. The corresponding gas phase composition is investigated using optical emission spectroscopy and compared to the FTIR, transmission and SE measurement results in order to validate our findings and ultimately optimize the deposition process. It is found that the primary silane flux ontomore » the surface, which depends on the positioning of the jet injection point and gas flow rate, plays an important role not only on the deposition rate but also on the OH content of the films. The authors conclude that high-density plasma deposition systems such as the MDECR plasma enhanced chemical vapor deposition system cannot be considered as well mixed for gases with dissociation products that have high sticking coefficients, contrary to the accepted paradigm.« less

Authors:
; ; ;  [1]
  1. LPICM, Ecole Polytechnique, 91128 Palaiseau (France)
Publication Date:
OSTI Identifier:
21192409
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
Additional Journal Information:
Journal Volume: 26; Journal Issue: 5; Other Information: DOI: 10.1116/1.2949234; (c) 2008 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1553-1813
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; DENSITY; ELECTRON CYCLOTRON-RESONANCE; ELLIPSOMETRY; EMISSION SPECTROSCOPY; FILMS; FOURIER TRANSFORMATION; GAS FLOW; INFRARED SPECTRA; MICROWAVE RADIATION; PLASMA; PROTECTIVE COATINGS; RADIOWAVE RADIATION; SILANES; SILICA; SILICON OXIDES; TEMPERATURE RANGE 0065-0273 K

Citation Formats

Botha, R, Haj Ibrahim, B, Bulkin, P, and Drevillon, B. Silane injection in a high-density low-pressure plasma system and its influence on the deposition kinetics and material properties of SiO{sub 2}. United States: N. p., 2008. Web. doi:10.1116/1.2949234.
Botha, R, Haj Ibrahim, B, Bulkin, P, & Drevillon, B. Silane injection in a high-density low-pressure plasma system and its influence on the deposition kinetics and material properties of SiO{sub 2}. United States. https://doi.org/10.1116/1.2949234
Botha, R, Haj Ibrahim, B, Bulkin, P, and Drevillon, B. 2008. "Silane injection in a high-density low-pressure plasma system and its influence on the deposition kinetics and material properties of SiO{sub 2}". United States. https://doi.org/10.1116/1.2949234.
@article{osti_21192409,
title = {Silane injection in a high-density low-pressure plasma system and its influence on the deposition kinetics and material properties of SiO{sub 2}},
author = {Botha, R and Haj Ibrahim, B and Bulkin, P and Drevillon, B},
abstractNote = {High-rate, low temperature deposition is an essential requirement for industrial fabrication technology to be suitable for the deposition of optical and protective coatings. High-density, low-pressure plasmas have received significant attention for such applications due to their ability to create large and controllable ion fluxes onto the substrate. In this study, the high-rate deposition of silica films from a silane and oxygen gas mixture in a high-density plasma system based on a matrix distributed electron cyclotron resonance (MDECR) plasma source is investigated using directional jet injection of undiluted silane. The influence of process parameters such as the microwave power, radio frequency biasing of the substrate holder, and gas flows on the OH content of the oxide films is studied using phase-modulated spectroscopic ellipsometry (SE), Fourier transform infrared (FTIR) spectroscopy, and transmission measurements. The results of the measurements, taken at various points across the wafer, show a decrease in the thickness-normalized OH concentration in the areas of higher deposition rates. The corresponding gas phase composition is investigated using optical emission spectroscopy and compared to the FTIR, transmission and SE measurement results in order to validate our findings and ultimately optimize the deposition process. It is found that the primary silane flux onto the surface, which depends on the positioning of the jet injection point and gas flow rate, plays an important role not only on the deposition rate but also on the OH content of the films. The authors conclude that high-density plasma deposition systems such as the MDECR plasma enhanced chemical vapor deposition system cannot be considered as well mixed for gases with dissociation products that have high sticking coefficients, contrary to the accepted paradigm.},
doi = {10.1116/1.2949234},
url = {https://www.osti.gov/biblio/21192409}, journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
issn = {1553-1813},
number = 5,
volume = 26,
place = {United States},
year = {Mon Sep 15 00:00:00 EDT 2008},
month = {Mon Sep 15 00:00:00 EDT 2008}
}