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Title: Magnetron sputtered Si-B-C-N films with high oxidation resistance and thermal stability in air at temperatures above 1500 deg. C

Abstract

Novel quaternary Si-B-C-N materials are becoming increasingly attractive because of their possible high-temperature and harsh-environment applications. In the present work, amorphous Si-B-C-N films were deposited on Si and SiC substrates by reactive dc magnetron cosputtering using a single C-Si-B or B{sub 4}C-Si target in nitrogen-argon gas mixtures. A fixed 75% Si fraction in the target erosion areas, a rf induced negative substrate bias voltage of -100 V, a substrate temperature of 350 deg. C, and a total pressure of 0.5 Pa were used in the depositions. The corresponding discharge and deposition characteristics (such as the ion-to-film-forming particle flux ratio, ion energy per deposited atom, and deposition rate) are presented to understand complex relationships between process parameters and film characteristics. Films deposited under optimized conditions (B{sub 4}C-Si target, 50% N{sub 2}+50% Ar gas mixture), possessing a composition (in at. %) Si{sub 32-34}B{sub 9-10}C{sub 2-4}N{sub 49-51} with a low (less than 5 at. %) total content of hydrogen and oxygen, exhibited extremely high oxidation resistance in air at elevated temperatures (even above 1500 deg. C). Formation of protective surface layers (mainly composed of Si and O) was proved by high-resolution transmission electron microscopy, Rutherford backscattering spectrometry, and x-ray diffraction measurements after oxidization.more » Amorphous structure of the Si-B-C-N films was maintained under the oxidized surface layers after annealing in air up to 1700 deg. C (a limit imposed by thermogravimetric analysis in oxidative atmospheres)« less

Authors:
; ; ; ; ; ; ;  [1]
  1. Department of Physics, University of West Bohemia, Univerzitni 22, 306 14 Plzen (Czech Republic)
Publication Date:
OSTI Identifier:
21192407
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
Additional Journal Information:
Journal Volume: 26; Journal Issue: 5; Other Information: DOI: 10.1116/1.2949232; (c) 2008 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1553-1813
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AIR; ARGON; BORON CARBIDES; DEPOSITION; FILMS; HYDROGEN; LAYERS; MAGNETRONS; MIXTURES; NITROGEN; OXIDATION; OXYGEN; PROTECTIVE COATINGS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDES; SUBSTRATES; TEMPERATURE RANGE 1000-4000 K; THERMAL GRAVIMETRIC ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION

Citation Formats

Vlcek, Jaroslav, Hreben, Stanislav, Kalas, Jiri, Capek, Jiri, Zeman, Petr, Cerstvy, Radomir, Perina, Vratislav, Setsuhara, Yuichi, Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Rez near Prague, and Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Ibaraki, Osaka 567-0047. Magnetron sputtered Si-B-C-N films with high oxidation resistance and thermal stability in air at temperatures above 1500 deg. C. United States: N. p., 2008. Web. doi:10.1116/1.2949232.
Vlcek, Jaroslav, Hreben, Stanislav, Kalas, Jiri, Capek, Jiri, Zeman, Petr, Cerstvy, Radomir, Perina, Vratislav, Setsuhara, Yuichi, Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Rez near Prague, & Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Ibaraki, Osaka 567-0047. Magnetron sputtered Si-B-C-N films with high oxidation resistance and thermal stability in air at temperatures above 1500 deg. C. United States. https://doi.org/10.1116/1.2949232
Vlcek, Jaroslav, Hreben, Stanislav, Kalas, Jiri, Capek, Jiri, Zeman, Petr, Cerstvy, Radomir, Perina, Vratislav, Setsuhara, Yuichi, Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Rez near Prague, and Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Ibaraki, Osaka 567-0047. 2008. "Magnetron sputtered Si-B-C-N films with high oxidation resistance and thermal stability in air at temperatures above 1500 deg. C". United States. https://doi.org/10.1116/1.2949232.
@article{osti_21192407,
title = {Magnetron sputtered Si-B-C-N films with high oxidation resistance and thermal stability in air at temperatures above 1500 deg. C},
author = {Vlcek, Jaroslav and Hreben, Stanislav and Kalas, Jiri and Capek, Jiri and Zeman, Petr and Cerstvy, Radomir and Perina, Vratislav and Setsuhara, Yuichi and Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Rez near Prague and Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Ibaraki, Osaka 567-0047},
abstractNote = {Novel quaternary Si-B-C-N materials are becoming increasingly attractive because of their possible high-temperature and harsh-environment applications. In the present work, amorphous Si-B-C-N films were deposited on Si and SiC substrates by reactive dc magnetron cosputtering using a single C-Si-B or B{sub 4}C-Si target in nitrogen-argon gas mixtures. A fixed 75% Si fraction in the target erosion areas, a rf induced negative substrate bias voltage of -100 V, a substrate temperature of 350 deg. C, and a total pressure of 0.5 Pa were used in the depositions. The corresponding discharge and deposition characteristics (such as the ion-to-film-forming particle flux ratio, ion energy per deposited atom, and deposition rate) are presented to understand complex relationships between process parameters and film characteristics. Films deposited under optimized conditions (B{sub 4}C-Si target, 50% N{sub 2}+50% Ar gas mixture), possessing a composition (in at. %) Si{sub 32-34}B{sub 9-10}C{sub 2-4}N{sub 49-51} with a low (less than 5 at. %) total content of hydrogen and oxygen, exhibited extremely high oxidation resistance in air at elevated temperatures (even above 1500 deg. C). Formation of protective surface layers (mainly composed of Si and O) was proved by high-resolution transmission electron microscopy, Rutherford backscattering spectrometry, and x-ray diffraction measurements after oxidization. Amorphous structure of the Si-B-C-N films was maintained under the oxidized surface layers after annealing in air up to 1700 deg. C (a limit imposed by thermogravimetric analysis in oxidative atmospheres)},
doi = {10.1116/1.2949232},
url = {https://www.osti.gov/biblio/21192407}, journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
issn = {1553-1813},
number = 5,
volume = 26,
place = {United States},
year = {Mon Sep 15 00:00:00 EDT 2008},
month = {Mon Sep 15 00:00:00 EDT 2008}
}