Characterization of plasma etching induced interface states at Ti/p-SiGe Schottky contacts

Journal Article · Tue Jul 15 00:00:00 EDT 2008 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.2913576· OSTI ID:21192384

Mamor, M; Sellai, A ^[1]

---

1. Physics Department, Sultan Qaboos University, P.O. Box 36 Muscat 123 (Oman)

The authors have used current-voltage (I-V) data measured over a wide temperature range (100-300 K) complemented by deep level transient spectroscopy (DLTS) for the assessment of the defects introduced in Si{sub 0.95}Ge{sub 0.05} by argon plasma sputter etching. From DLTS, defect concentration depth profiling was extracted and revealed that the main defect introduced during argon plasma sputtering is located very close to the surface. I-V-T analysis shows that the electrical characteristics deviated from the ideal case and indicate the presence of interface states, resulting from the plasma etching induced surface states at Ti/Si{sub 0.95}Ge{sub 0.05} interface. The interface state density as well as its temperature dependence were obtained from forward bias I-V-T measurements by considering the bias dependence of effective barrier height {phi}{sub e}. It is found that interface states density is temperature dependent although weakly.

• OSTI ID: 21192384
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 26, Issue 4; Other Information: DOI: 10.1116/1.2913576; (c) 2008 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ARGON
DEEP LEVEL TRANSIENT SPECTROSCOPY
DEFECTS
DENSITY
ELECTRIC POTENTIAL
ETCHING
GERMANIUM ALLOYS
GERMANIUM SILICIDES
INTERFACES
PLASMA
SEMICONDUCTOR MATERIALS
SILICON ALLOYS
SPUTTERING
SURFACES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TITANIUM