Effects of hydrogen ambient and film thickness on ZnO:Al properties
- Colorado School of Mines, 1500 Illinois St., Golden, Colorado 80401 (United States)
Undoped ZnO and ZnO:Al (0.1, 0.2, 0.5, 1.0, and 2.0 wt. % Al{sub 2}O{sub 3}) films were deposited by rf magnetron sputtering. Controlled incorporation of H{sub 2} in the Ar sputtering ambient for films grown at substrate temperatures up to 200 deg. C results in mobilities exceeding 50 cm{sup 2} V{sup -1} s{sup -1} when using targets containing 0.1 and 0.2 wt. % Al{sub 2}O{sub 3}. Temperature-dependent Hall measurements show evidence of phonon scattering as the dominant scattering mechanism in these lightly Al-doped films, while ionized impurity scattering appears increasingly dominant at higher doping levels. A combination of compositional and structural analysis shows that hydrogen expands the ZnO lattice normal to the plane of the substrate and desorbs from ZnO at {approx}250 deg. C according to temperature-programmed desorption and annealing experiments.
- OSTI ID:
- 21192383
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 26, Issue 4; Conference: 54. international AVS symposium, Seattle, WA (United States), 14-19 Oct 2007; Other Information: DOI: 10.1116/1.2891261; (c) 2008 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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