Characterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies

Journal Article · Tue Jul 15 00:00:00 EDT 2008 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.2929851· OSTI ID:21192377

Bozanic, A; Majlinger, Z; Petravic, M; Gao, Q; Llewellyn, D; Crotti, C; Yang, Y -W ^[1]

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1. Department of Physics, University of Rijeka, 51000 Rijeka (Croatia)

Formation of molecular nitrogen under low-energy nitrogen bombardment of III-V compound semiconductor surfaces has been studied by photoemission spectroscopy around N 1s core-level and near-edge x-ray absorption fine structure (NEXAFS) around N K edge. Interstitial molecular nitrogen N{sub 2} has been formed in all of the samples under consideration. The presence of N{sub 2} produces a sharp resonance in low-resolution NEXAFS spectra, showing the characteristic vibrational fine structure in high-resolution measurements, and at the same time, a new peak, shifted toward higher binding energies for several eV, in all N 1s photoemission spectra.

• OSTI ID: 21192377
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 26, Issue 4; Other Information: DOI: 10.1116/1.2929851; (c) 2008 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
BINDING ENERGY
ELECTRON SPECTRA
EMISSION SPECTRA
EV RANGE
FINE STRUCTURE
GALLIUM ARSENIDES
INDIUM COMPOUNDS
INTERSTITIALS
NITROGEN
PHOTOELECTRON SPECTROSCOPY
PHOTOEMISSION
SEMICONDUCTOR MATERIALS
X RADIATION
X-RAY SPECTROSCOPY