skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Thermal transport properties of polycrystalline tin-doped indium oxide films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3093684· OSTI ID:21190118
; ; ; ;  [1]; ; ;  [2]
  1. Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 229-8558 (Japan)
  2. National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 3, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8563 (Japan)

Thermal diffusivity of polycrystalline tin-doped indium oxide (ITO) films with a thickness of 200 nm has been characterized quantitatively by subnanosecond laser pulse irradiation and thermoreflectance measurement. ITO films sandwiched by molybdenum (Mo) films were prepared on a fused silica substrate by dc magnetron sputtering using an oxide ceramic ITO target (90 wt %In{sub 2}O{sub 3} and 10 wt %SnO{sub 2}). The resistivity and carrier density of the ITO films ranged from 2.9x10{sup -4} to 3.2x10{sup -3} {omega} cm and from 1.9x10{sup 20} to 1.2x10{sup 21} cm{sup -3}, respectively. The thermal diffusivity of the ITO films was (1.5-2.2)x10{sup -6} m{sup 2}/s, depending on the electrical conductivity. The thermal conductivity carried by free electrons was estimated using the Wiedemann-Franz law. The phonon contribution to the heat transfer in ITO films with various resistivities was found to be almost constant ({lambda}{sub ph}=3.95 W/m K), which was about twice that for amorphous indium zinc oxide films.

OSTI ID:
21190118
Journal Information:
Journal of Applied Physics, Vol. 105, Issue 7; Other Information: DOI: 10.1063/1.3093684; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English