Thermal transport properties of polycrystalline tin-doped indium oxide films
- Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 229-8558 (Japan)
- National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 3, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8563 (Japan)
Thermal diffusivity of polycrystalline tin-doped indium oxide (ITO) films with a thickness of 200 nm has been characterized quantitatively by subnanosecond laser pulse irradiation and thermoreflectance measurement. ITO films sandwiched by molybdenum (Mo) films were prepared on a fused silica substrate by dc magnetron sputtering using an oxide ceramic ITO target (90 wt %In{sub 2}O{sub 3} and 10 wt %SnO{sub 2}). The resistivity and carrier density of the ITO films ranged from 2.9x10{sup -4} to 3.2x10{sup -3} {omega} cm and from 1.9x10{sup 20} to 1.2x10{sup 21} cm{sup -3}, respectively. The thermal diffusivity of the ITO films was (1.5-2.2)x10{sup -6} m{sup 2}/s, depending on the electrical conductivity. The thermal conductivity carried by free electrons was estimated using the Wiedemann-Franz law. The phonon contribution to the heat transfer in ITO films with various resistivities was found to be almost constant ({lambda}{sub ph}=3.95 W/m K), which was about twice that for amorphous indium zinc oxide films.
- OSTI ID:
- 21190118
- Journal Information:
- Journal of Applied Physics, Vol. 105, Issue 7; Other Information: DOI: 10.1063/1.3093684; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CARRIER DENSITY
DEPOSITION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRONS
HEAT TRANSFER
INDIUM OXIDES
LASERS
MOLYBDENUM
PHONONS
POLYCRYSTALS
PULSED IRRADIATION
SEMICONDUCTOR MATERIALS
SPUTTERING
THERMAL CONDUCTIVITY
THERMAL DIFFUSIVITY
THIN FILMS
TIN OXIDES
WIEDEMANN-FRANZ LAW
ZINC OXIDES