Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions
- LAAS-CNRS, University of Toulouse, 7 avenue du Colonel Roche, 31077 Toulouse (France)
- Mattson Thermal Products GmbH, Daimlerstrasse 10, D-89160 Dornstadt (Germany)
- CEMES-CNRS, University of Toulouse, 29 rue Jeanne Marvig, 31055 Toulouse (France)
- CNR-IMM sezione di Catania, Stradale Primosole 50 Catania (Italy)
The Hall scattering factor r{sub H} has been determined for holes in high-dose boron-implanted ultrashallow junctions containing high concentrations of boron-interstitial clusters (BICs), combining scanning capacitance microscopy, nanospreading resistance, Hall effect, and secondary ion mass spectroscopy measurements. A value of r{sub H}=0.74{+-}0.1 has been found in reference defect-free fully activated junctions, in good agreement with the existing literature. In the case of junctions containing high concentrations of immobile and electrically inactive BICs, and independently of the implant or the annealing process, the r{sub H} value has been found to be equal to 0.95{+-}0.1. The increase in the r{sub H} value is explained in terms of the additional scattering centers associated to the presence of high concentrations of BICs.
- OSTI ID:
- 21190037
- Journal Information:
- Journal of Applied Physics, Vol. 105, Issue 4; Other Information: DOI: 10.1063/1.3079505; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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