X-ray reflectivity and total reflection x-ray fluorescence study of surface oxide evolution in a GaAs/AlAs multilayer system
- Chemistry for Technologies Laboratory, INSTM, University of Brescia, Brescia 15-25121 (Italy)
- Surface and Thin Film Standards Section, National Metrology Institute of Japan, AIST, Tsukuba, Ibaraki 305-8563 (Japan)
Modifications of GaAs/air interface under x-ray exposure have been investigated by means of x-ray reflectometry (XRR). For this purpose a GaAs/AlAs multilayer system was continuously monitored for 90 h while acquiring XRR profiles. Three different starting models for the oxide/contaminants layer were tested for the analysis of XRR data and discussed. The main effect of x-ray exposure, revealed by the three different approaches, is an increase in the thickness of the gallium and arsenic oxides until a saturation value (about 3.0 nm) is reached after about 50 h. Total reflection x-ray fluorescence analysis performed on a couple of twin samples, either irradiated and nonirradiated, confirms that the oxidation process is promoted by x-ray exposure and indicates the presence of a richer As oxide phase at the surface of the x-ray irradiated samples.
- OSTI ID:
- 21185962
- Journal Information:
- Journal of Applied Physics, Vol. 105, Issue 1; Other Information: DOI: 10.1063/1.3054336; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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