Lasing in zinc selenide single crystals pumped by high-voltage subnanosecond pulses

Journal Article · Mon Mar 31 00:00:00 EDT 2008 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2008V038N03ABEH013709; COUNTRY OF INPUT: INTERNATIONAL ATOMIC ENERGY AGENCY (IAEA)· OSTI ID:21185808

Mesyats, G A; Nasibov, A S ^[1]; Shpak, V G; Shunailov, S A; Yalandin, M I ^[2]

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1. P.N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
2. Institute of Electrophysics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg (Russian Federation)

The action of subnanosecond high-voltage pulses (U = 50-200 kV, t{sub p} = 100-500 ps) on 1-2-mm-thick plane-parallel ZnSe plates is studied. A sample was placed between a cathode and a circular anode. A discharge propagated along the lines of force of the electric field. Lasing at 480 nm appeared at the discharge front and opposite to the cathode. The average propagation velocity of the discharge achieved 5x10{sup 8} cm s{sup -1}, the pulse power was 600 W, and the radiation divergence did not exceed 2-3 deg. No streamer discharges oriented along crystallographic directions were observed. (lasers)

• OSTI ID: 21185808
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 38, Issue 3; Other Information: DOI: 10.1070/QE2008v038n03ABEH013709; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANODES
CATHODES
CRYSTALLOGRAPHY
ELECTRIC FIELDS
ELECTRIC POTENTIAL
LASERS
MONOCRYSTALS
PULSES
ZINC SELENIDES