Composition and luminescence of AlInGaN layers grown by plasma-assisted molecular beam epitaxy
- Department of Physics, SUPA, Strathclyde University, Glasgow G4 0NG (United Kingdom)
- ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, 28040 Madrid (Spain)
A study of AlInGaN epilayers, grown by plasma-assisted molecular beam epitaxy, was performed using spatially resolved x-ray microanalysis and luminescence spectroscopy in order to investigate competition between the incorporation of In, Al, and Ga as a function of the growth temperature in the 565-660 deg. C range and the nominal AlN mole fraction. The samples studied have AlN and InN mole fractions in the ranges of 4%-30% and 0%-16%, respectively. Composition measurements show the effect of decreasing temperature to be an increase in the incorporation of InN, accompanied by a small but discernible decrease in the ratio of GaN to AlN mole fractions. The incorporation of In is also shown to be significantly increased by decreasing the Al mole fraction. Optical emission peaks, observed by cathodoluminescence mapping and by photoluminescence, provide further information on the epilayer compositions as a function of substrate temperature, and the dependencies of peak energy and linewidth are plotted.
- OSTI ID:
- 21182667
- Journal Information:
- Journal of Applied Physics, Vol. 104, Issue 7; Other Information: DOI: 10.1063/1.2993549; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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