Testing asymmetry in plasma-ball growth seeded by a nanoscale absorbing defect embedded in a SiO{sub 2} thin-film matrix subjected to UV pulsed-laser radiation
Journal Article
·
· Journal of Applied Physics
- Laboratory for Laser Energetics, University of Rochester, 250 East River Road, Rochester, New York 14623-1299 (United States)
Previous studies of ultraviolet, nanosecond-pulsed-laser damage in thin films revealed nanoscale absorbing defects as a major source of damage initiation. It was also demonstrated that damage (crater formation) is facilitated by plasma-ball formation around absorbing defects. In this work an attempt is made to verify the symmetry of the plasma ball by irradiating SiO{sub 2} thin film with embedded gold nanoparticles from the side of either the air/film or substrate/film interfaces. Crater-formation thresholds derived in each case support preferential plasma-ball growth in the direction of the laser-beam source. The strong impact of internal E-field distribution is identified.
- OSTI ID:
- 21182614
- Journal Information:
- Journal of Applied Physics, Vol. 104, Issue 6; Other Information: DOI: 10.1063/1.2980054; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Wed Mar 14 00:00:00 EDT 2007
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OSTI ID:21182614
Two mechanisms of crater formation in ultraviolet-pulsed-laser irradiated SiO{sub 2} thin films with artificial defects
Journal Article
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Wed Jun 01 00:00:00 EDT 2005
· Journal of Applied Physics
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OSTI ID:21182614