Testing asymmetry in plasma-ball growth seeded by a nanoscale absorbing defect embedded in a SiO{sub 2} thin-film matrix subjected to UV pulsed-laser radiation

Journal Article · Mon Sep 15 00:00:00 EDT 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2980054· OSTI ID:21182614

Papernov, S; Schmid, A W ^[1]

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1. Laboratory for Laser Energetics, University of Rochester, 250 East River Road, Rochester, New York 14623-1299 (United States)

Previous studies of ultraviolet, nanosecond-pulsed-laser damage in thin films revealed nanoscale absorbing defects as a major source of damage initiation. It was also demonstrated that damage (crater formation) is facilitated by plasma-ball formation around absorbing defects. In this work an attempt is made to verify the symmetry of the plasma ball by irradiating SiO{sub 2} thin film with embedded gold nanoparticles from the side of either the air/film or substrate/film interfaces. Crater-formation thresholds derived in each case support preferential plasma-ball growth in the direction of the laser-beam source. The strong impact of internal E-field distribution is identified.

• OSTI ID: 21182614
• Journal Information: Journal of Applied Physics, Vol. 104, Issue 6; Other Information: DOI: 10.1063/1.2980054; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AIR
CRYSTAL GROWTH
ENERGY BEAM DEPOSITION
GOLD
LASER RADIATION
LASERS
NANOSTRUCTURES
PARTICLES
PLASMA
PULSED IRRADIATION
SILICON OXIDES
SUBSTRATES
THIN FILMS
ULTRAVIOLET RADIATION