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Title: Advanced carbon-based material C{sub 60} modification using partially ionized cluster and energetic beams

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.54563· OSTI ID:21179626
; ; ; ;  [1]
  1. State key joint lab for material modification by laser, ion and electron beams, Fudan University, Shanghai, 200433 (China)

Two processes have been undertaken using Partially ionized cluster deposition (PICBD) and energetic ion bombardment beams deposition (IBD) respectively. C{sub 60} films deposited by PICBD at V=0 and 65 V, which result in highly textured close-packed structure in orientation (110) and being more polycrystalline respectively, the resistance of C{sub 60} films to oxygen diffusion contamination will be improved. In the case of PICBD, the ionized C{sub 60} soccer-balls molecules in the evaporation beams will be fragmented in collision with the substrate under the elevated accelerating fields Va. As a new synthetic IBD processing, two low energy (400 and 1000 eV) nitrogen ion beams have been used to bombard C{sub 60} films to synthesize the carbon nitride films.

OSTI ID:
21179626
Journal Information:
AIP Conference Proceedings, Vol. 416, Issue 1; Conference: Symposium on similarities and differences between atomic nuclei and clusters, Tsukuba (Japan), 1-4 Jul 1997; Other Information: DOI: 10.1063/1.54563; (c) 1997 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English