Ionized cluster beam technology for material science
- Ion Engineering Research Institute Corporation 2-8-1, Tsuda-Yamate, Hirakata, Osaka, 573-01 (Japan)
The most suitable kinetic energy range of ionized materials in film formation and epitaxial growth is from a few eV to a few hundreds eV, especially, less than about 100eV, when ions are used as a host. The main roles of ions in film formation are the effects due to their kinetic energy and the electronic charge effects which involve the effect to active film formation and the effect acceleration of chemical reactions. Therefore, it is important to develope the technology to transport large volume of a flux of ionized particles with an extremely low incident energy without any troubles due to the space charge effects and charge up problems on the surface. This is the exact motivation for us to have been developing the Ionized Cluster Beam (ICB) technology since 1972. By ICB technology materials (actually wide varieties of materials such as metal, semiconductor, magnetic material, insulator, organic material, etc.) are vaporized and ejected through a small hole nozzle into a high vacuum, where the vaporized material condenses into clusters with loosely coupled atoms with the sizes about from 100 to a few 1000 atoms (mainly 100-2000 atoms) by supercondensation phenomena due to the adiabatic expansion in this evaporation process through a small hole nozzle. In the ICB technology an atom in each cluster is ionized by irradiated by electron shower, and the ionized clusters are accelerated by electric field onto a substrate. The ionized clusters with neutral clusters impinged onto a substrate are spreaded separately into atoms migrating over the substrate, so that the surface migration energy of the impinged atoms, that is, surface diffusion energy are controlled by an incident energy of a cluster. In this report the theoretical and also experimental results of ICB technology are summarized.
- OSTI ID:
- 21179618
- Journal Information:
- AIP Conference Proceedings, Vol. 416, Issue 1; Conference: Symposium on similarities and differences between atomic nuclei and clusters, Tsukuba (Japan), 1-4 Jul 1997; Other Information: DOI: 10.1063/1.54560; (c) 1997 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ATOMIC CLUSTERS
CLUSTER BEAMS
DIFFUSION
ELECTRIC FIELDS
ENERGY BEAM DEPOSITION
EPITAXY
EV RANGE
EVAPORATION
FILMS
IRRADIATION
MAGNETIC MATERIALS
SEMICONDUCTOR MATERIALS
SILICON
SPACE CHARGE
SUBSTRATES
SURFACE CLEANING
SURFACES