Transformation from an atomically stepped NiO thin film to a nanotape structure: A kinetic study using x-ray diffraction

Journal Article · Mon Dec 15 00:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3050112· OSTI ID:21175812

Sakata, Osami ^[1]; Soon, Jia Mei ^[2]; Matsuda, Akifumi; Akita, Yasuyuki; Yoshimoto, Mamoru ^[3]

---

1. Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8, Kouto, Sayo, Hyogo 679-5198 (Japan) and JST-CREST, Sanbancho, Chiyoda, Tokyo 102-0075 (Japan)
2. JASRI/SPring-8, Kouto, Sayo, Hyogo 679-5198 (Japan)
3. Tokyo Institute of Technology, Nagatsuta, Midori, Yokohama, 226-8503 (Japan)

Transformation from an atomically stepped epitaxial thin film of NiO to a self-assemble nanotape structure at the step edge was observed in situ using synchrotron x-ray diffraction. The pristine NiO thin film was epitaxially grown on an ultrasmooth sapphire (0001) substrate with a regular step of 0.2 nm in height using laser molecular beam epitaxy. Transformation from the thin film to the nanotape structure was facilitated by postannealing in air from room temperature to 620 K. From the Arrhenius plot of ln(in-plane domain sizes) versus 1/T, an atomic-scale transformation energy of {approx}0.0135 eV/atom was derived.

• OSTI ID: 21175812
• Journal Information: Applied Physics Letters, Vol. 93, Issue 24; Other Information: DOI: 10.1063/1.3050112; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AIR
ANNEALING
CRYSTAL GROWTH
LASERS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
NICKEL OXIDES
PHASE TRANSFORMATIONS
SAPPHIRE
SUBSTRATES
SYNCHROTRONS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
X-RAY DIFFRACTION