The chemical and electronic surface and interface structure of CuGaSe{sub 2} thin-film solar cell absorbers

Journal Article · Mon Dec 08 00:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2998391· OSTI ID:21175805

Baer, M ^[1]; Rusu, M; Lehmann, S; Schedel-Niedrig, Th; Lauermann, I; Lux-Steiner, M C ^[2]

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1. Department of Chemistry, University of Nevada, Las Vegas, 4505 Maryland Parkway, Box 454003, Las Vegas, Nevada 89154-4003 (United States)
2. Solarenergieforschung (SE2), Helmholtz-Zentrum Berlin fuer Materialien und Energie, Lise-Meitner Campus, Glienicker Str. 100, D-14109 Berlin (Germany)

The chemical and electronic surface and interface structure of CuGaSe{sub 2} thin films was investigated by photoelectron spectroscopy. With bulk [Ga]/[Cu] ratios increasing from 0.94 to 1.39 a transition of the Cu:Ga:Se surface composition from 1:1:2 to 1:3:5 and a downward shift of the valence band maximum with respect to the Fermi energy were observed. The comparison with the conduction band minimum (CBM) of CdS reveals that at the CdS/CuGaSe{sub 2} interface the recombination barrier height simultaneously increases and a 'clifflike' offset is formed to the CBM of CuGaSe{sub 2}.

• OSTI ID: 21175805
• Journal Information: Applied Physics Letters, Vol. 93, Issue 23; Other Information: DOI: 10.1063/1.2998391; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM SULFIDES
COPPER ALLOYS
FERMI LEVEL
GALLIUM ALLOYS
RECOMBINATION
SELENIUM ALLOYS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SURFACE PROPERTIES
TERNARY ALLOY SYSTEMS
THIN FILMS
ULTRAVIOLET RADIATION
X-RAY PHOTOELECTRON SPECTROSCOPY