Multiple pulse thermal damage thresholds of materials for x-ray free electron laser optics investigated with an ultraviolet laser

Journal Article · Mon Nov 17 00:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3021081· OSTI ID:21175757

Hau-Riege, Stefan P; London, Richard A; Bionta, Richard M; Soufli, Regina; Ryutov, Dmitri; Shirk, Michael; Baker, Sherry L ^[1]; Smith, Patrick M; Nataraj, Pradeep ^[2]

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1. Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, California 94539 (United States)
2. Kovio, Inc., 1145 Sonora Court, Sunnyvale, California 94086 (United States)

Optical elements to be used for x-ray free electron lasers (XFELs) must withstand multiple high-fluence pulses. We have used an ultraviolet laser to study the damage of two candidate materials, crystalline Si and B{sub 4}C-coated Si, emulating the temperature profile expected to occur in optics exposed to XFEL pulses. We found that the damage threshold for 10{sup 5} pulses is {approx}20% to 70% lower than the melting threshold.

• OSTI ID: 21175757
• Journal Information: Applied Physics Letters, Vol. 93, Issue 20; Other Information: DOI: 10.1063/1.3021081; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON CARBIDES
DAMAGE
FREE ELECTRON LASERS
MELTING
OPTICS
PULSES
SEMICONDUCTOR MATERIALS
SILICON
ULTRAVIOLET RADIATION
X RADIATION